Investigations of Thin Tin-films Using Grazing Incidence Reflectometry and Diffractometry

TiNx films of about 50 nm thickness were deposited on silicon wafer using a hollow cathode arc evaporation device (HCAED) by variation of the discharge power. The films were investigated with grazing incidence asymmetric Bragg diffraction (GIABD) and grazing incidence reflectometry to get information about the plasma-wall interaction. Both methods were performed with a conventional SIEMJZNS D5000 diffractometer. The GIABD measurements indicate formation of polycrystalline TiN,. The intensities were measured at different incidence angles and fitted to the function of the calculated effective irradiated sample volume for TiNx to check the homogeneity of film growth. The intensity and the peak shifi due to refraction were calculated using the results of reflectometry measurements. The modelling of the reflectometry measurements detects a Ti02 layer of about 5 nm on top of the TiN layer. Density and roughness of the films are nearly constant at discharge powers between 4.5 kW and 5.5 kW. At 4.1 kW a reduced density and increased roughness occurs. Although the Ti/N-ratio in the plasma changes at different discharge powers the Ti/N-ratio of the films remains constant.